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MUBW 15-12 A7
Output Inverter T1 - T6
Equivalent Circuits for Simulation
Symbol
Conditions
Maximum Ratings
Conduction
V CES
V GES
V GEM
T VJ = 25°C to 150°C
Continuous
Transient
1200
± 20
± 30
V
V
V
I C25
I C80
RBSOA
t SC
(SCSOA)
P tot
T C = 25°C
T C = 80°C
V GE = ± 15 V; R G = 82 ? ; T VJ = 125°C
Clamped inductive load; L = 100 μH
V CE = V CES ; V GE = ± 15 V; R G = 82 ? ; T VJ = 125°C
non-repetitive
T C = 25°C
35
25
I CM = 35
V CEK ≤ V CES
10
180
A
A
A
μs
W
D11 - D16
Rectifier Diode (typ. at T J = 125°C)
V 0 = 1.08 V; R 0 = 15 m ?
T1 - T6 / D1 - D6
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.37 V; R 0 = 62 m ?
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.32 V; R 0 = 30 m ?
Symbol
Conditions
Characteristic Values
(T VJ = 25 ° C, unless otherwise specified)
min. typ. max.
T7 / D7
IGBT (typ. at V GE = 15 V; T J = 125°C)
V 0 = 1.32 V; R 0 = 131 m ?
V CE(sat)
V GE(th)
I CES
I C = 15 A; V GE = 15 V; T VJ = 25°C
T VJ = 125°C
I C = 0.6 mA; V GE = V CE
V CE = V CES ; V GE = 0 V; T VJ = 25°C
4.5
2.1
2.3
2.6
6.5
0.9
V
V
V
mA
Free Wheeling Diode (typ. at T J = 125°C)
V 0 = 1.39 V; R 0 = 56 m ?
Thermal Response
T VJ = 125°C
0.9
mA
I GES
t d(on)
V CE = 0 V; V GE = ± 20 V
100
200
nA
ns
t r
t d(off)
t f
E on
E off
C ies
Q Gon
R thJC
Inductive load, T VJ = 125°C
V CE = 600 V; I C = 15 A
V GE = ±15 V; R G = 82 ?
V CE = 25 V; V GE = 0 V; f = 1 MHz
V CE = 600V; V GE = 15 V; I C = 15 A
(per IGBT)
70
500
70
2.3
1.8
1000
70
ns
ns
ns
mJ
mJ
pF
nC
0.7 K/W
D11 - D16
Rectifier Diode (typ.)
C th1 = 0.106 J/K; R th1 = 1.06 K/W
C th2 = 0.79 J/K; R th2 = 0.239 K/W
T1 - T6 / D1 - D6
IGBT (typ.)
Output Inverter D1 - D6
C th1 = 0.156 J/K; R th1 = 0.545 K/W
C th2 = 1.162 J/K; R th2 = 0.155 K/W
Symbol
Conditions
Maximum Ratings
Free Wheeling Diode (typ.)
I F25
I F80
T C = 25°C
T C = 80°C
26
17
A
A
C th1 = 0.065 J/K; R th1 = 1.758 K/W
C th2 = 0.639 J/K; R th2 = 0.342 K/W
T7 / D7
IGBT (typ.)
Symbol
Conditions
Characteristic Values
min. typ. max.
C th1 = 0.09 J/K; R th1 = 0.954 K/W
C th2 = 0.809 J/K; R th2 = 0.246 K/W
V F
I RM
t rr
I F = 15 A; V GE = 0 V; T VJ = 25°C
T VJ = 125°C
I F = 15 A; di F /dt = -400 A/μs; T VJ = 125°C
V R = 600 V; V GE = 0 V
1.8
16
130
2.7
V
V
A
ns
Free Wheeling Diode (typ.)
C th1 = 0.043 J/K; R th1 = 2.738 K/W
C th2 = 0.54 J/K; R th2 = 0.462 K/W
R thJC
2-8
(per diode)
2.1 K/W
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